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DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D121
BYD77 series Ultra fast low-loss controlled avalanche rectifiers
Product specification Supersedes data of 1996 May 24 1999 Nov 15
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * Guaranteed avalanche energy absorption capability * Shipped in 8 mm embossed tape * Smallest surface mount rectifier outline.
MAM061
BYD77 series
hermetically sealed and fatigue free as coefficients of expansion of all used parts are matched.
(1) Implotec is a trademark of Philips.
DESCRIPTION Cavity free cylindrical glass SOD87 package through ImplotecTM(1) technology. This package is
handbook, 4 columns
k
a
Fig.1 Simplified outline (SOD87) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM BYD77A BYD77B BYD77C BYD77D BYD77E BYD77F BYD77G VR continuous reverse voltage BYD77A BYD77B BYD77C BYD77D BYD77E BYD77F BYD77G IF(AV) average forward current BYD77A to D BYD77E to G IF(AV) average forward current BYD77A to D BYD77E to G Ttp = 105 C; see Figs 2 and 3; averaged over any 20 ms period; see also Figs 10 and 11 Tamb = 60 C; PCB mounting (see Fig.16); see Figs 4 and 5; averaged over any 20 ms period; see also Figs 10 and 11 - - - - - - - - - - - 50 100 150 200 250 300 400 2.00 1.85 0.85 0.80 V V V V V V V A A A A PARAMETER repetitive peak reverse voltage - - - - - - - 50 100 150 200 250 300 400 V V V V V V V CONDITIONS MIN. MAX. UNIT
1999 Nov 15
2
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
SYMBOL IFRM PARAMETER repetitive peak forward current BYD77A to D BYD77E to G IFRM repetitive peak forward current BYD77A to D BYD77E to G IFSM ERSM Tstg Tj non-repetitive peak forward current non-repetitive peak reverse avalanche energy storage temperature junction temperature t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax L = 120 mH; Tj = 25 C prior to surge; inductive load switched off Tamb = 60 C; see Figs 8 and 9 - - - - -65 -65 CONDITIONS Ttp = 105 C; see Figs 6 and 7 - -
BYD77 series
MIN.
MAX. 15 13 8.5 8.0 25 10 +175 +175 A A A A A
UNIT
mJ C C
ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage BYD77A to D BYD77E to G VF forward voltage BYD77A to D BYD77E to G V(BR)R reverse avalanche breakdown voltage BYD77A BYD77B BYD77C BYD77D BYD77E BYD77F BYD77G IR reverse current VR = VRRMmax; see Fig.14 VR = VRRMmax; Tj = 165 C; see Fig.14 trr reverse recovery time BYD77A to D BYD77E to G when switched from IF = 0.5 A to IR = 1 A; measured at IR = 0.25 A; see Fig.18 IR = 0.1 mA 55 110 165 220 275 330 440 - - - - - - - - - - - - - - - - - - 1 100 V V V V V V V A A IF = 1 A; see Figs 12 and 13 CONDITIONS IF = 1 A; Tj = Tj max; see Figs 12 and 13 MIN. - - - - TYP. - - - - MAX. 0.75 0.83 0.98 1.05 V V V V UNIT
- -
- -
25 50
ns ns
1999 Nov 15
3
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
SYMBOL Cd PARAMETER diode capacitance BYD77A to D BYD77E to G dI R -------dt maximum slope of reverse recovery current BYD77A to D BYD77E to G THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS when switched from IF = 1 A to VR 30 V and dIF/dt = -1 A/s; see Fig.17 CONDITIONS f = 1 MHz; VR = 0 V; see Fig.15 MIN. - -
BYD77 series
TYP. 50 40
MAX. - -
UNIT pF pF
- -
- -
4 5
A/s A/s
VALUE 30 150
UNIT K/W K/W
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer 40 m, see Fig.16. For more information please refer to the "General Part of associated Handbook".
1999 Nov 15
4
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
GRAPHICAL DATA
MCD598
BYD77 series
MCD596
handbook, halfpage
4
3 handbook, halfpage I F(AV) (A) 2
IF(AV) (A) 3
2
1 1
0 0 BYD77A to D a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 Ttp ( C)
o
0 200 0 BYD77E to G a = 1.42; VR = VRRMmax; = 0.5. Switched mode application. 100 Ttp ( o C) 200
Fig.2
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
Fig.3
Maximum permissible average forward current as a function of tie-point temperature (including losses due to reverse leakage).
MCD597
1.2 handbook, halfpage I F(AV) (A) 0.8
handbook, halfpage
1.0
MCD595
I F(AV) (A)
0.5
0.4
0 0 100 Tamb ( o C) 200
0 0 100 Tamb ( o C) 200
BYD77A to D a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.16. Switched mode application.
BYD77E to G a = 1.42; VR = VRRMmax; = 0.5. Device mounted as shown in Fig.16. Switched mode application.
Fig.4
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
Fig.5
Maximum permissible average forward current as a function of ambient temperature (including losses due to reverse leakage).
1999 Nov 15
5
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
BYD77 series
MCD593
handbook, full pagewidth
20
I FRM (A)
= 0.05
0.1
10 0.2
0.5 1
0 10 -2
10 -1
10 0
10 1
10 2
10 3
t p (ms )
10 4
BYD77A to D Ttp = 105 C; Rth j-tp = 30 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 200 V.
Fig.6 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD591
handbook,20 pagewidth full
I FRM (A)
= 0.05
0.1 10 0.2
0.5 1
0 -2 10 BYD77E to G
10
-1
10 0
10 1
10
2
10
3
t p (ms )
10
4
Ttp = 105C; Rth j-tp = 30 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 400 V.
Fig.7 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 15
6
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
BYD77 series
MCD592
handbook, full pagewidth
10
I FRM (A)
= 0.05
0.1 5
0.2
0.5 1
0 -2 10
10 -1
10 0
10 1
10 2
10 3
t p (ms )
10 4
BYD77A to D Tamb = 60 C; Rth j-a = 150 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 200 V.
Fig.8 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
MCD590
handbook,10 pagewidth full
I FRM (A)
= 0.05
0.1 5
0.2
0.5 1
0 -2 10 BYD77E to G
10 -1
10 0
10 1
10 2
10 3
t p (ms )
10 4
Tamb = 60 C; Rth j-a = 150 K/W. VRRMmax during 1 - ; curves include derating for Tj max at VRRM = 400 V.
Fig.9 Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.
1999 Nov 15
7
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
BYD77 series
MGC530
MGC529
handbook, halfpage
2
a=3 2.5 2 1.57 1.42
handbook, halfpage
2
a=3
2.5 2 1.57 1.42
P (W)
P (W)
1
1
0 0 1 IF(AV) (A) 2
0 0 1 IF(AV) (A) 2
BYD77A to D a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
BYD77E to G a = IF(RMS)/IF(AV); VR = VRRMmax; = 0.5.
Fig.10 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
Fig.11 Maximum steady state power dissipation (forward plus leakage current losses, excluding switching losses) as a function of average forward current.
MCD594
MGC531
handbook, halfpage
10
IF (A) 8
handbook, halfpage
10
IF (A) 8
6
6
4
4
2
2
0 0 1 VF (V) 2
0 0 1 2 VF (V) 3
BYD77A to D Dotted line: Tj = 175 C. Solid line: Tj = 25 C.
BYD77E to G Dotted line: Tj = 175 C. Solid line: Tj = 25 C.
Fig.12 Forward current as a function of forward voltage; maximum values. 1999 Nov 15 8
Fig.13 Forward current as a function of forward voltage; maximum values.
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
BYD77 series
103 handbook, halfpage IR (A) 102
MGA853
2 10 handbook, halfpage
MCD608
Cd (pF)
10 10
A, B, C, D
E, F, G
1 0 100 T j ( o C) 200
1 1 10
10 2 V R (V)
10 3
VR = VRRMmax.
f = 1 MHz; Tj = 25 C.
Fig.14 Reverse current as a function of junction temperature; maximum values.
Fig.15 Diode capacitance as a function of reverse voltage; typical values.
50
IF ndbook, halfpage dI F dt t rr 10% t 50 2.5 IR dI R dt 100%
MGC499
4.5
1.25
MSB213
Dimensions in mm.
Fig.16 Printed-circuit board for surface mounting.
Fig.17 Reverse recovery definitions.
1999 Nov 15
9
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
BYD77 series
handbook, full pagewidth
DUT +
IF (A) 0.5 1 t rr
10
25 V 50 0 0.25 0.5 IR (A) 1.0
t
MAM057
Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns.
Fig.18 Test circuit and reverse recovery time waveform and definition.
1999 Nov 15
10
Philips Semiconductors
Product specification
Ultra fast low-loss controlled avalanche rectifiers
PACKAGE OUTLINE Hermetically sealed glass surface mounted package; ImplotecTM(1) technology; 2 connectors
BYD77 series
SOD87
k
(2)
a
D1
D
L DIMENSIONS (mm are the original dimensions) UNIT mm D 2.1 2.0 D1 2.0 1.8 H 3.7 3.3 L 0.3 H
L
0
1 scale
2 mm
Notes 1. Implotec is a trademark of Philips. 2. The marking indicates the cathode. OUTLINE VERSION SOD87 REFERENCES IEC 100H03 JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 99-03-31 99-06-04
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
1999 Nov 15
11
Philips Semiconductors - a worldwide company
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For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1999
Internet: http://www.semiconductors.philips.com
SCA 68
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
135002/03/pp12
Date of release: 1999
Nov 15
Document order number:
9397 750 06272

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